摘要 |
A treatment method for a surface of a photoresist layer is provided. After forming a patterned photoresist layer over a wafer, a surface treatment step is performed to the photoresist layer by using at least one reaction gas comprising hydrogen bromide or hydrogen iodide to form a hardened layer over the surface of the photoresist layer. Wherein, the surface treatment step and the etching step are in-situ performed.
|