发明名称 |
Method of fabricating storage capacitor in semiconductor memory device, and storage capacitor structure |
摘要 |
A storage capacitor has a double cylinder type structure, with a small cylinder in a lower part thereof and a cylindrical lower electrode structure disposed on the cylindrical contact plug. A method of fabricating the storage capacitor includes: forming a contact hole for exposing an activation region of a transistor; depositing a conductive film to form within the contact hole a contact plug of the storage capacitor having a void therein; opening an upper part of the void of the contact plug; and covering a surface of the device with material to form the storage capacitor electrode, to obtain the storage capacitor electrode having a double cylindrical structure.
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申请公布号 |
US7436014(B2) |
申请公布日期 |
2008.10.14 |
申请号 |
US20050134261 |
申请日期 |
2005.05.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON WOOK-SUNG |
分类号 |
H01L27/108;H01L29/72;H01L21/02;H01L21/768;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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