MANUFACTURING METHOD FOR LIGHT EMITTING DIODE DEVICE

摘要

A method for manufacturing a light emitting diode device is provided to improve an ohmic junction characteristic between a p type gallium nitride layer and a transparent electrode. An n type gallium nitride semiconductor layer(110) is formed on a substrate(100). An active layer is formed on the n type gallium nitride semiconductor layer. A p type gallium nitride semiconductor layer(120) doped with magnesium is formed on the active layer. A magnesium nitride layer(125) is formed on the p type gallium nitride semiconductor layer. The magnesium nitride layer is thermally processed to diffuse a magnesium element of the magnesium nitride layer into the inside of the p type gallium nitride semiconductor layer and to activate the doped magnesium of the p type gallium nitride semiconductor layer. A transparent electrode(130) is formed on the magnesium nitride layer. The transparent electrode is bonded with the magnesium nitride layer by using an ohmic junction method.