USING DIFFERENT GATE DIELECTRICS WITH NMOS AND PMOS TRANSISTORS OF A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT,申请号KR20077002261-传众专利搜索

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发明名称	USING DIFFERENT GATE DIELECTRICS WITH NMOS AND PMOS TRANSISTORS OF A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT
摘要
申请公布号	KR100863365(B1)	申请公布日期	2008.10.13
申请号	KR20077002261	申请日期	2007.01.29
申请人		发明人
分类号	H01L21/8238;H01L27/092	主分类号	H01L21/8238
代理机构		代理人
主权项
地址

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