| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor that prevents not only the metal ion diffusion from a gate insulating layer to an organic semiconductor layer but also the deterioration of the characteristics, a high-reliability electronic circuit, a display device and electronic device. SOLUTION: The thin film transistor 1 mounted on a substrate 10 includes a source electrode 20a and drain electrode 20b separately disposed each other, an organic semiconductor layer 30 disposed between the source electrode 20a and drain electrode 20b, a gate insulating layer 40 disposed between the organic semiconductor layer 30 and gate electrode 50. Furthermore, the gate insulating layer 40 includes an ion trapping substance 41 to trap a metal ion, and this ion trapping substance 41 is, preferably, diffused in a matrix 42 constituted of an insulating material. COPYRIGHT: (C)2009,JPO&INPIT
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