发明名称 PROCESSING PERFORMANCE STABILIZING METHOD OF PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To stabilize the processing performance of a plasma treatment apparatus in which a hardly removable element remains in its inside. SOLUTION: The processing performance stabilizing method of a plasma treatment apparatus has a step 104 for cleaning the inside of a plasma treatment chamber, a step 102 for forming a coating film for coating the inside of the plasma treatment chamber and a step 103 of executing plasma treatment for a target processing workpiece. In the step of forming the coating film, the coating (at least any one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, carbon and halocaron) is allowed to contain a substance (one or more selected from among halogen, carbon, sulfur, metal oxide and metal halide) which is hardly removed even when using a step of cleaning the workpiece by using a gas containing an element or a substance (HCl, HBr, HI, H<SB>2</SB>, CHF<SB>3</SB>, CH<SB>4</SB>, CHxCly, CHxBry, and CHxIy (x=1 to 3, y=4-x) and SiH<SB>4</SB>) for promoting the formation of the coating film. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008244292(A) 申请公布日期 2008.10.09
申请号 JP20070084937 申请日期 2007.03.28
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 IWAKOSHI TAKENAO;FURUSE MUNEO;ITABASHI NAOSHI;ISHIMURA HIROAKI;SAITO TAKESHI;MORI MASASHI;KIKKAI MOTOHIKO
分类号 H01L21/3065 主分类号 H01L21/3065
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