| 摘要 |
PROBLEM TO BE SOLVED: To provide a silica glass crucible for pulling a silicon single crystal, which surely suppresses liquid surface vibration and provides a high degree of single crystallization, in the silica glass crucible for pulling the silicon single crystal, which accommodates a silicon melt from that the silicon single crystal is pulled. SOLUTION: In an initial melt line zone 10 of a transparent layer 3 having a height dimension of 10-30 mm, a first substantially bubble-free layer having a thickness dimension of 5-80μm is formed on the inner peripheral surface side of the zone 10, and a bubble-including layer which has a thickness dimension of 5-8μm and in which air bubbles having an average diameter of 40-80μm exist in the density of 75-130 pieces/mm<SP>3</SP>is formed at the outside of the substantially transparent layer. In the whole area below the initial melt line zone 10, a second substantially bubble-free layer 9 having a thickness dimension of≥300μm is formed on the inner peripheral surface side. COPYRIGHT: (C)2009,JPO&INPIT
|
