| 摘要 |
A hybrid orientation direct-semiconductor-bond (DSB) substrate with shallow trench isolation (STI) that is self-aligned to recrystallization boundaries is formed by patterning a hard mask layer for STI, a first amorphization implantation into openings in the hard mask layer, lithographic patterning of portions of a top semiconductor layer, a second amorphization implantation into exposed portions of the DSB substrate, recrystallization of the portions of the top semiconductor layer, and formation of STI utilizing the pattern in the hard mask layer. The edges of patterned photoresist for the second amorphization implantation are located within the openings in the patterned hard mask layer. Defective boundary regions formed underneath the openings in the hard mask layer are removed during the formation of STI to provide a leakage path free substrate. Due to elimination of a requirement for increased STI width, device density is increased compared to non-self-aligning process integration schemes.
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