发明名称 |
METHOD AND SYSTEM FOR IMPROVING CRITICAL DIMENSION UNIFORMITY |
摘要 |
A method for improving critical dimension uniformity of a wafer includes exposing a plurality of mask patterns on a first plurality of substrates at predetermined locations with common splits conditions of focus and exposure dose for each of the first plurality of substrates to form a plurality of perturbed wafers; measuring a critical dimension of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers; averaging the critical dimension measured at each of the predetermined locations over the plurality of perturbed wafers to form a perturbed critical dimension map; measuring a sidewall angle of the plurality of mask patterns; averaging the sidewall angle measured to form a perturbed sidewall angle map; and providing the perturbed critical dimension map and the perturbed sidewall angle map to an exposure tool.
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申请公布号 |
US2008248403(A1) |
申请公布日期 |
2008.10.09 |
申请号 |
US20070696602 |
申请日期 |
2007.04.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU SHINN-SHENG;KE CHIH-MING;HUANG JACKY;CHEN CHUN-KUANG;GAU TSAI-SHENG |
分类号 |
G03C5/00;G03F1/00;G06F17/50 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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