| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the occurrence of a scum in an exposure step. <P>SOLUTION: In a lithography method, an original layout with line patterns and pad patterns is designed, and a pad pattern is extracted, and then a first reduction layout which is reduced by a first reduction width relative to the pad pattern layout is obtained. A second reduction layout which is reduced by a second reduction width larger than the first reduction width relative to the pad pattern layout is obtained, and then an assist pattern layout which is self-aligned to the pad pattern layout by deducting the second reduction layout from the first reduction layout is obtained. Assist patterns are generated in the original layout by deducting the assist pattern layout from the original layout, whereby the scum in the exposure step of transferring the layout having assist patterns generated therein, onto a semiconductor substrate is suppressed. <P>COPYRIGHT: (C)2009,JPO&INPIT |
