| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an Si light-emitting material for emitting light in a blue region using an ion implantation method, and to provide a light-emitting element using a blue light-emitting member manufactured by the method. <P>SOLUTION: There is provided a blue light-emitting member manufacturing method for implanting an Si ion to a crystal or fused quartz member 10 under a predetermined irradiation condition, and then desirably allowing the member to be subjected to a predetermined time annealing treatment at a predetermined temperature, and therby manufacturing a member for emitting blue light. In the irradiation condition, the implantation dose of the implanted Si ion is desirably 5×10<SP>16</SP>ions/cm<SP>2</SP>or more under the energy of 80 keV at least. The annealing treatment is performed at a temperature higher than 1,100°C and equal to or lower than 1,300°C for 15 minutes to 1 hour, desirably 20 minutes to 30 minutes. <P>COPYRIGHT: (C)2009,JPO&INPIT |
