| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems in techniques for improving performance in microprocessing of semiconductor elements using actinic rays or radiation, particularly, KrF excimer laser beams, electron beams, or EUV beams; to provide a positive resist composition having high sensitivity, reduced line width roughness and density distribution dependency, and particularly in EUV exposure, showing high sensitivity as well as preferable dissolution contrast; and to provide a method for forming a pattern using the composition. <P>SOLUTION: The resist composition contains a resin having a specified repeating unit having an indenone structure and a repeating unit which is decomposed by an effect of an acid to increase alkali solubility, and a compound which generates an acid by irradiation with actinic rays or radiation. The method for forming a pattern is carried out by using the resist composition. <P>COPYRIGHT: (C)2009,JPO&INPIT |
