发明名称 PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To reduce defects generated in an etching process and a wiring material embedding process, in a region where the transfer of a pattern by a template is not performed. <P>SOLUTION: The pattern forming method comprises processes of: coating a photosensitive resin 2 on a film to be worked on a wafer substrate 1; exposing and developing a part of the photosensitive resin 2 and forming a first pattern with an opening; coating a photocurable material 3 on the film to be worked exposed at the opening of the first pattern; bringing one surface of a translucent template 4, for which a second pattern including prescribed recesses and projections is formed on the one surface into contact with the photocurable material 3; irradiating light from the other surface side of the template 4; and separating the template 4 from the photocurable material 3. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008244259(A) 申请公布日期 2008.10.09
申请号 JP20070084514 申请日期 2007.03.28
申请人 TOSHIBA CORP 发明人 YONEDA IKUO;UMAGOE TOSHIYUKI
分类号 H01L21/027 主分类号 H01L21/027
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