| 摘要 |
PROBLEM TO BE SOLVED: To well trim a gate electrode, to prevent a resist from falling or deforming after the resist trimming, further to solve the problem caused by a fact that conventional trimming takes place by plasma etching, and further to prevent a STI part from being excessively damaged when forming a sidewall in trimming the gate electrode in a manufacturing method of a semiconductor device. SOLUTION: A process of manufacturing a semiconductor device having the gate electrode made of metal silicide which is a metal-containing material or metal alone includes steps of: etching the gate electrode 14G, thereafter oxidizing a surface of a gate part; and trimming the gate electrode 14G by exposing the gate part to a gaseous substance containing organic acid and heating it to volatilize a reaction product of the metal and the organic acid. COPYRIGHT: (C)2009,JPO&INPIT
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