| 摘要 |
PURPOSE:To form ohmic contact between a compound semiconductor substrate and a thin film semiconductor, and to obtain ohmic contact having heat resistance by a method wherein the thin film semiconductor is formed on the compound semiconductor substrate to be converted into a high concentration layer, and heat treatment is performed. CONSTITUTION:A Ge film 4 is formed on an N type GaAs substrate 2, and patterning is performed. Ions of As, which is an N type impurity in relation to the Ge film 4, are implanted, annealing is performed in an As pressure atmosphere 6 to convert the Ge film 4 into a high concentration N type, and the N type GaAs substrate 2 and the Ge film 4 are contacted ohmically. An electrode 7 (Ti/Pt/Au) is evaporated to form a semiconductor element. Because ohmic contact is formed utilizing solid phase diffusion without using a liquid phase reaction, interfacial deformation between the N type GaAs substrate and the change of the surface are not generated. |
