PHASE TRANSITION MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a phase transition memory device capable of minimizing thermal interference phenomenon between mutually adjacent phase transition patterns. SOLUTION: A first electrode 71 having a first surface S1 is disposed on a substrate 51. A second electrode 72 having a second surface S2 positioned at a level different from that of the first surface S1 is provided. The electrode 72 is isolated from the electrode 71. A third electrode 81 corresponding to the electrode 71 is disposed. A fourth electrode 82 corresponding to the electrode 72 is disposed. A first phase transition pattern 77 is interposed between the first surface S1 and the electrode 81. A second transition pattern 78 is interposed between the second surface S2 and the electrode 82. Upper surfaces of the pattern 77 and the pattern 78 are disposed on the same plane. COPYRIGHT: (C)2009,JPO&INPIT