PLASMA NITRIDED GATE OXIDE, HIGH-K METAL GATE BASED CMOS DEVICE

摘要

In accordance with the invention, there are CMOS devices (100) and semiconductor devices and methods of fabricating them. The CMOS device can include a substrate (110) including a first active region (112) and a second active region (114) and a first transistor device over the first active region, wherein the first transistor device includes a high-K layer (120) over the first active region, a first dielectric capping layer on the high-K layer, and a first metal gate layer over the first dielectric capping layer (132). The CMOS device can also include a second transistor device over the second active region, wherein the second transistor device includes a high-K layer over the second active region, a second dielectric capping layer (134) on the second high-K layer, and a second metal gate layer over the second dielectric capping layer.