发明名称 |
SELF-ALIGNED TRENCH MOSFET AND METHOD OF MANUFACTURE |
摘要 |
A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of gate regions, a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, a plurality of body regions disposed in recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region. |
申请公布号 |
WO2008121991(A1) |
申请公布日期 |
2008.10.09 |
申请号 |
WO2008US58951 |
申请日期 |
2008.03.31 |
申请人 |
VISHAY-SILICONIX;LI, JIAN;CHEN, KUO-IN;TERRIL, KYLE |
发明人 |
LI, JIAN;CHEN, KUO-IN;TERRIL, KYLE |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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