| 发明名称 |
METHOD FOR FORMING METALLIC PATTERN WIRING, AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-conductivity metallic wiring by drying metal paste without cracking at low temperature and in a short time in forming patterning wire using the metal paste in a direct-drawing method. <P>SOLUTION: A patterning wire using metal paste containing metallic particles in organic solvent is formed in a direct-drawing method, and freeze drying process for sublimation of the organic solvent is performed for the wire. Subsequently, reduction of metal surface oxide film on the freeze drying-processed wire is made by atomic hydrogen. <P>COPYRIGHT: (C)2009,JPO&INPIT |
| 申请公布号 |
JP2008244202(A) |
申请公布日期 |
2008.10.09 |
| 申请号 |
JP20070083570 |
申请日期 |
2007.03.28 |
| 申请人 |
KYUSHU INSTITUTE OF TECHNOLOGY;HARIMA CHEM INC |
发明人 |
IZUMI AKIRA;ISHIHARA MASAMICHI;TAKADA HARUKI |
| 分类号 |
H01L21/445;H01L21/3205;H01L23/12 |
主分类号 |
H01L21/445 |
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