| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for forming an upper antireflection film capable of thoroughly reducing standing-wave effect and blob defects in lithography and having superior solubility in an alkali developer, and to provide a resist pattern forming method. <P>SOLUTION: The composition for forming an upper antireflection film contains a polymer (A), soluble in an alkali developer and having an aromatic group, and at least one of a radiation-sensitive acid generator (B) and a compound (C) having sulfonic acid residue. <P>COPYRIGHT: (C)2009,JPO&INPIT |
