| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of recovering and holding the initial characteristics of a porous dielectric layer that has changed in a treatment process. <P>SOLUTION: The treatment method includes a process of presenting a substrate comprising, at the upper part, a porous dielectric layer 10 of a treated porous dielectric layer which is at least partially exposed, a process of forming a thin aqueous film at least exposed part of the treated porous dielectric layer 10, and a process of placing the exposed porous dielectric film 10 comprising an aqueous film on its surface in the atmosphere containing a mixture containing at least one sililation reagent and condensed CO<SB>2</SB>. Thus, the initial characteristics of the porous dielectrics 10 is restored. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
