| 摘要 |
PROBLEM TO BE SOLVED: To provide a design method of a semiconductor device using a capacitance simulator, and to provide a manufacturing method of a semiconductor device that uses the same. SOLUTION: The manufacturing method is that of a semiconductor device comprising a semiconductor substrate, an insulator formed on the semiconductor device, and an electrode formed on the insulator. The design method of a semiconductor device involves calculating a capacitance by approximating some region of the semiconductor substrate, the insulator and some region of the electrode formed on the insulator to a conductor and a dielectric according to their electric properties. The manufacturing method of a semiconductor device involves adjusting the insulator and electrode sizes, such that a calculated capacitance becomes an optimum value. COPYRIGHT: (C)2009,JPO&INPIT
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