| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a non-volatile memory, capable of easily manufacturing a non-volatile memory, having a charge storing film below a silicon layer. SOLUTION: The manufacturing method of a non-volatile memory is used to form a non-volatile memory, having a plurality of memory cells 10 that forms at least one-dimensional cell arrangement on an SOI wafer consisting of a supporting substrate 11, an embedded oxide film 12 and a silicon layer. The manufacturing method has a step of applying anisotropic etching processing to the silicon layer and the embedded oxide film in accordance with a hole arrangement pattern of a plurality of holes, to form a plurality of through holes that extend to the inside of the embedded oxide film via the silicon layer; a step of applying isotropic etching processing the embedded oxide film, exposed via the through holes to form a plurality cylindrical cavities each spread in the radius direction of the through holes; and a step of filling the cylindrical cavity with a charge storing film 15. Furthermore, a charge-storing film, left after replacing the charge storing film in a predetermined region of the cylindrical cavity with an element isolation film being formed into an island shape, and an active region is formed on a silicon layer above the charge-storing film formed into an island shape. COPYRIGHT: (C)2009,JPO&INPIT
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