| 摘要 |
A semiconductor memory device includes: plural bit lines connected with plural memory cells, respectively; plural transfer lines allocated in common to the plural bit lines; sense amplifiers (SA 1 ) and (SA 2 ) connected to these transfer lines, respectively; and a control circuit making the sense amplifier (SA 2 ) perform a converting operation during an amplifying operation performed by the sense amplifier (SA 1 ). Because the plural sense amplifiers are allocated to the same bit lines, and these are operated in parallel in this way, data can be read at a high speed.
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