| 摘要 |
A method of manufacturing a semiconductor device includes: forming a first pad including a first metal and an inter-connection line including the first metal in a scribe lane region; forming a second pad including the first metal in a chip region; sequentially forming an etch-stop layer and a first insulation layer on the first pad, the inter-connection line, and the second pad; exposing the first and second pads by patterning the etch-stop layer and the first insulation layer; forming third and fourth pads including a second metal on the first and second pads; sequentially forming second and third insulation layers on the third pad, the fourth pad, and the patterned first insulation layer; and etching the first, second, and third insulation layers using the patterned photosensitive layer on the third insulation layer to expose the third and fourth pads. |
