DOPED SUBSTRATE TO BE HEATED

摘要

The invention proposes a structure (10) intended to be heated comprising a substrate (11 ) for the front face (1 ) deposition of a useful layer intended to receive components for electronics, optics or optoelectronics, the structure (10) furthermore containing doped elements that absorb infrared radiation so as to substantially increase infrared absorption by the structure (10) so that said front face (1) reaches a given temperature when a given infrared power is supplied to the structure (10), characterized in that at least one part of the doped elements have insufficient electrical activity or localization in the structure, such that they cannot disturb the operation of the components. In addition, the invention relates to a method of producing this structure and a method of forming said useful layer in a semiconductor material on the structure.