MAGNETIC MEMORY DEVICE

摘要

A magnetic memory device using a domain structure and a multi-state of a ferromagnetic material is provided to improve an operational speed by simplifying a read process and a write process. An intersected cell between a first current line(140) and a second current line(160) is formed on a substrate(110). An inductive magnetic field is formed by applying pulse type current to the intersected cell. A ferromagnetic material having magnetic anisotropy is formed as a single domain state or a multi-domain state by adjusting a direction and intensity of the inductive magnetic field. A ferromagnetic semiconductor layer(120) is formed to store multi-information by recording a planar hole resistance about a multi-state or a magnetic resistance. A first insulating layer(130) is formed on the ferromagnetic semiconductor layer. The first current line is formed on the insulating layer. A second insulating layer(150) is formed on the first current line. The second current line is formed on the insulating layer.