AMORPHOUS OXIDE SEMICONDUCTOR THIN-FILM, ITS FORMING METHOD, MANUFACTURING PROCESS OF THIN-FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, LIGHT-EMITTING DEVICE, DISPLAY AND SPUTTERING TARGET

摘要

PROBLEM TO BE SOLVED: To provide an amorphous oxide semiconductor thin-film which is insoluble to a phosphorous acid based etching liquid and soluble to an oxalic acid based etching liquid by rationalizing the amount of indium, tin and zinc, and to provide its forming method.

SOLUTION: The image display 3 comprises a glass substrate 10, a liquid crystal 40 as a light control element, a bottom gate type thin-film transistor 1 for driving the liquid crystal 40, a pixel electrode 30 and a counter electrode 50 wherein the amorphous oxide semiconductor thin-film 2 of the bottom gate type thin-film transistor 1 has a carrier density below 10+18cm-3. Furthermore, it is insoluble to the phosphorous acid based etching liquid and soluble to the oxalic acid based etching liquid.

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