| 摘要 |
PROBLEM TO BE SOLVED: To provide a molecule battery memory device in which a S/N ratio during read-out is improved. SOLUTION: Each memory cell MC of the molecule battery memory device comprises combination of a molecule battery 11 and a selection transistor 12, parasitic capacitance 26 exists in the molecule battery 11. PN junction 12a exists in the selection transistor 12, as reverse bias is performed, a junction leak current i<SB>L</SB>is made to flow. Thereby, electric charges accumulated in the parasitic capacitance 26 are discharged gradually by junction leak of the selection transistor 12, a final potential of a node S is reduced toward a substrate potential Vs of the transistor. However, since difference (=Vs-Vp) between the substrate potential Vs and the reference potential Vp is set being almost equal to open voltage Voc of the molecule battery 11 and a potential of the node S is converged surely to the open voltage Voc seeing from plate wiring PL, the S/N ratio during read-out of data can be improved. COPYRIGHT: (C)2009,JPO&INPIT |
