| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic transistor capable of preventing the leakage current between the gate electrode and the source electrode and the drain electrode. SOLUTION: The organic transistor 1 has an organic semiconductor layer 13, the gate electrode 15 provided on the organic semiconductor layer 13 via a gate insulating film 14, and the source electrode 11 and the drain electrode 12 arranged opposing via the organic semiconductor layer 13. The source electrode 11 and the gate electrode 15, and the drain electrode 12 and the gate electrode 15 are partially opposed via the gate insulating film 14, respectively, and cap layers 16 and 17, consisting of an insulating material different from that of the gate insulating film 14, are provided between the source electrode 11 and the gate insulating film 14 and between the drain electrode 12 and the gate insulating film 14, respectively. COPYRIGHT: (C)2009,JPO&INPIT
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