| 摘要 |
To eliminate the unevenness of the film thickness of the wafers, and increase the polishing efficiency, reduce the running cost and enhance the production yield. A CMP apparatus 1 includes a film thickness measuring means 6 that measures the film thickness of the wafers before polishing, a polishing recipe preparing means 7 that prepares polishing conditions so that the polishing conditions such as polishing speed, polishing pressure, and the like for the wafers become optimal, a polishing time forecasting means that forecasts the polishing time of the wafer on the basis of the optimal polishing condition and the measured value, a polishing time measuring means that measures the actual polishing time of the wafer, and a computer 9 that controls the polishing condition on the basis of the measured value and the like of the polishing time. Further, the computer 9 includes a calculating unit 23 that calculate the difference between the measured value of the polishing time and the forecasted value thereof, and a polishing condition correcting/changing unit 24 that corrects/changes the polishing conditions so that the calculated difference becomes minimal, and thereby, the correction/change of the polishing conditions is carried out in real time.
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