发明名称 |
Method for Controlling Phase Angle of a Mask by Post-Treatment |
摘要 |
A method for controlling phase angle of a mask is provided. A mask comprising a substrate and an absorber is formed. A nitrogen-containing plasma treatment is performed on the mask to reduce the phase angle. Alternatively, a nitrogen-containing plasma treatment is performed on the mask, followed by a vacuum ultraviolet treatment to form a passivated layer on the mask.
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申请公布号 |
US2008248404(A1) |
申请公布日期 |
2008.10.09 |
申请号 |
US20070697015 |
申请日期 |
2007.04.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN CHUN-LANG;SHEN TRAN-HUI;TSAI FEI-GWO;HUANG CHIEN-CHAO |
分类号 |
G03F1/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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