发明名称 Method for Controlling Phase Angle of a Mask by Post-Treatment
摘要 A method for controlling phase angle of a mask is provided. A mask comprising a substrate and an absorber is formed. A nitrogen-containing plasma treatment is performed on the mask to reduce the phase angle. Alternatively, a nitrogen-containing plasma treatment is performed on the mask, followed by a vacuum ultraviolet treatment to form a passivated layer on the mask.
申请公布号 US2008248404(A1) 申请公布日期 2008.10.09
申请号 US20070697015 申请日期 2007.04.05
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN CHUN-LANG;SHEN TRAN-HUI;TSAI FEI-GWO;HUANG CHIEN-CHAO
分类号 G03F1/00 主分类号 G03F1/00
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