SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

Provided are a semiconductor device capable of improving its yields better than the prior art, and a method for manufacturing the semiconductor device. The semiconductor device comprises a silicon substrate (1), an element-separating insulating film (2) formed on the silicon substrate (1), a tunnel insulating film (5) formed in the element-separating insulating film (2) over the silicon substrate (1), band-shaped patterns (6e) formed individually over the element-separating insulating film (2) and the tunnel-insulating film (5) and composed alternately of a floating gate portion (6c) and a cell separating portion (6d), an intermediate insulating film (7) formed over the band-shaped pattern (6e), and a band-shaped control gate (8a) formed over the intermediate insulating film (7) and extending in the same direction as that of the band-shaped pattern (6e).