| 摘要 |
PROBLEM TO BE SOLVED: To obtain excellent transistor characteristics, and to prevent the generation of leaks. SOLUTION: This manufacturing method is provided with a step of forming a semiconductor layer on a substrate; a step of forming a gate insulating film on the semiconductor substrate; a step of introducing an impurity of a conductivity type reverse to that of a source region or a drain region into the semiconductor layer in a region smaller than a region for planely forming a gate electrode, thereby forming a channel region; a step of forming the gate electrode; a step of thermally diffusing the reverse conductivity-type impurity in a region superimposed on the gate electrode after forming the gate electrode; and a step of introducing an impurity into the semiconductor layer adjacent to the channel region, thereby forming a source region and a drain region. COPYRIGHT: (C)2009,JPO&INPIT |
