| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystallization method for manufacturing a large crystal particle array semiconductor thin-film with proper yield, a method for manufacturing a thin-film transistor, a substrate for laser crystallization, a thin-film transistor, and a display device. SOLUTION: The crystallizing method includes the steps of forming a non-single crystal semiconductor film on the substrate, forming a light absorbing film to absorb a part of laser beam for crystallization on the non-single crystal semiconductor film, and irradiating the front surface of the light absorbing film with the laser beam for crystallization to form a continuous and periodical light intensity distribution. In this crystallization method, a light absorption ratio r is selected for the light absorbing film, as a value for obtaining the desired crystal particle length, when an absorption rate of the laser beam for crystallization of the light absorbing film is defined as Acap; an absorption rate of the laser beam for crystallization of the non-single crystal semiconductor film is defined as Asi; and light absorption rate r, defined by the absorption rate Acap and the absorption rate Asi, is given by r=Acap/(Acap+Asi). COPYRIGHT: (C)2009,JPO&INPIT |
