| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of semiconductor devices. SOLUTION: In a step of forming a conductor film as an electrode to the first principal surface S1 and the second principal surface S2 located in the opposite side along the thickness direction of a semiconductor wafer 1 on which an element is formed, the semiconductor wafer 1 is accommodated in the manner that the entire part of at least the second principal surface S2 of the semiconductor wafer 1 is stored within a processing chamber 4. Thereafter, the semiconductor wafer 1 is rotated and the etching process is conducted by supplying a chemical solution to the second principal surface S2 of the semiconductor wafer. Subsequently, the chemical solution is washed away by supplying pure water W to the second principal surface S2. After the processing chamber 4 is moved to expose the second principal surface S2 of the semiconductor wafer 1 to the external side of the processing chamber 4, the pure water W is dried up. Thereafter, a conductor film is formed to the second principal surface S2 of the semiconductor wafer 1. COPYRIGHT: (C)2009,JPO&INPIT
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