发明名称 |
POSITIVE-INTRINSIC-NEGATIVE (PIN)/NEGATIVE-INTRINSIC-POSITIVE (NIP) DIODE |
摘要 |
A positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode includes a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate is of a first conductivity. The PIN/NIP diode includes at least one trench formed in the first main surface which defines at least one mesa. The trench extends to a first depth position in the semiconductor substrate. The PIN/NIP diode includes a first anode/cathode layer proximate the first main surface and the sidewalls and the bottom of the trench. The first anode/cathode layer is of a second conductivity opposite to the first conductivity. The PIN/NIP diode includes a second anode/cathode layer proximate the second main surface, a first passivation material lining the trench and a second passivation material lining the mesa. The second anode/cathode layer is the first conductivity.
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申请公布号 |
US2008246122(A1) |
申请公布日期 |
2008.10.09 |
申请号 |
US20080116286 |
申请日期 |
2008.05.07 |
申请人 |
ICEMOS TECHNOLOGY CORPORATION |
发明人 |
WILSON ROBIN;BROGAN CONOR;GRIFFIN HUGH J.;MACNAMARA CORMAC |
分类号 |
H01L29/868 |
主分类号 |
H01L29/868 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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