| 摘要 |
<p>A method for manufacturing a flash memory device is provided to prevent erroneous operations of the device and occurrence of humps, caused as elements having quick diffusion speed penetrate into a transistor, by preventing the upper portion of an SAC insulation layer from being damaged. A method for manufacturing a flash memory device comprises the following steps of: forming a first conductive layer(104) on a semiconductor substrate(100) in which a cell region, an interface region and a peripheral region are defined; performing an etch process so that the first conductive layer formed in the interface region has a stepped portion; forming a second conductive layer(108) and a hard mask layer(116) at an upper portion of the first conductive layer having the stepped portion; patterning the hard mask layer, the second conductive layer and the first conductive layer to form a gate(120) on the cell region and the peripheral region, and to form a dummy gate on the interface region; forming an insulation layer at an upper portion of the semiconductor substrate including the hard mask layer; and forming and planarizing an interlayer insulation layer at an upper portion of the insulation layer.</p> |
