| 摘要 |
A precursor solution for aluminum deposition is provided to prevent an alane-based precursor compound from being degraded during a deposition process by improving thermostability of the alane-based precursor compound using a cyclopentadiene-based organic compound, thereby preparing a highly pure aluminum thin film reproducibly. An aluminum organometallic precursor solution for chemical deposition is characterized in that an alane-based precursor compound represented by a formula(1) is dissolved in a cyclopentadiene-based organic compound represented by a formula(3). In the formula (1), each R^I, R^II and R^III is independently H, C1-5 alkyl, primary alkyl amino, secondary alkyl amino or alkoxy; L is a Lewis base which is a heterocyclic amine-based compound represented by a formula(2)(wherein R is C1-4 alkyl, each R' and R" is independently H or C1-2 alkyl, and m is an integer from 2 to 8), the heterocyclic amine being selected form the group consisting of alkylaziridine, alkylazetidine, alkylpyrrolidine, alkylpiperidine, alkylhexamethyleneimine, and alkylheptamethyleneimine; n is 1 or 2 an integer. In the formula(3), each R^1 and R^2 is independently H or C1-4 alkyl. A method for preparing the aluminum organometallic precursor solution comprises the steps of: (a) gradually adding the compound of the formula(3) to the compound of the formula(1) with mixing under an inert gas such as Ar and N2; and (b) distilling a mixture under reduced pressure to purify.
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