发明名称 MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a highly reliable photoelectric conversion element provided with high photoelectric conversion efficiency, high durability, and particularly high temperature retaining characteristics. <P>SOLUTION: This is the manufacturing method of the photoelectric conversion element equipped with a first substrate 3 equipped with a first electrode 6 having a semiconductor layer 7 carrying sensitized dye, a second substrate 9 equipped with a second electrode 11 opposingly facing the semiconductor layer 7 of the first electrode 6, a charge transport layer 13 formed between the first electrode 6 and the second electrode 11, and a sealing part 15 which is formed at the surrounding of the charge transport layer 13 and which retains the charge transport layer 13 between the first electrode 6 and the second electrode 11. This includes a step of sealing the charge transport layer 13 with the sealing part 15 in an atmosphere of lower pressure than the atmosphere by 0.02 MPa or more. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008243623(A) 申请公布日期 2008.10.09
申请号 JP20070082960 申请日期 2007.03.27
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 KANBE SHINGO
分类号 H01M14/00;H01L31/04 主分类号 H01M14/00
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