| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method capable of easily removing photoresist remaining after dry etching processing in the case of forming a pattern by a dray etching method. <P>SOLUTION: The pattern forming method comprises: an organic film forming process (a) for forming an organic film on a support; a surface processing process (b) for processing the organic film by plasma processing or ion implantation processing; an image forming process (c) for forming a resist layer on the organic film after the surface processing process and then removing a partial area of the resist layer to form a resist pattern on the organic film; an etching process (d) for removing the organic film like the resist pattern by the dry etching processing using the resist pattern as a mask to form the pattern on the support; and a resist layer removing process (e) for removing the remaining resist layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
