| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an interconnection processing technology by which resist poisoning is suppressed in particular, without causing deterioration of increase in a dielectric constant and an insulation property of insulating films. <P>SOLUTION: A semiconductor device includes a substrate, the first insulating film provided on the substrate, and the second insulating film provided on the first insulating film, where the first insulating film and the second insulating film have nitrogen or a methyl group as a component, and a resist film is provided on the second insulating film, then a hole is formed at the second insulating film by an etching technology. In the semiconductor device, an intermediate insulating layer having no nitrogen and the methyl group as the component is provided between the first insulating film and the second insulating film. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
