| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor module which has high bonding reliability in a first solder layer bonding a circuit side metal plate and a semiconductor device and in a second solder layer bonding a heat dissipation side metal plate and a heat dissipation base board, even if the semiconductor module passes through a repetition cold cycle. <P>SOLUTION: A semiconductor module 9 is constituted by: bonding a circuit side metal plate 3 to one side of a ceramics substrate 4 and bonding a heat dissipation side metal plate 5 to the other side thereof; bonding a semiconductor device 1 to the circuit side metal plate 3 through a first solder layer 2; and bonding a heat dissipation base board 7 to the heat dissipation side metal plate 5 through a second solder layer 6. A ratio M/S of a semiconductor device diagonal line length M and a circuit side metal plate thickness S is set to≥19.5, and a ratio X/t of a diagonal line length X of the ceramics substrate 4 and a heat dissipation side metal plate thickness t is set to≤128. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
