| 摘要 |
PROBLEM TO BE SOLVED: To simplify a manufacturing method of a partial SOI substrate in a SOI substrate. SOLUTION: First, a silicon wafer 40 is prepared. A masking material 50 is formed on the wafer 40, and the masking material 50 is patterned so that it opens on a part to be a first region 1 of the wafer 40 (Fig. 2(a)). Then, oxygen ions are implanted into the wafer 40 (Fig. 2(b)). Although the oxygen ions are prevented by the masking material 50 from entering the silicon wafer 40 in a second region 2 where the masking material 50 is formed on the wafer 40, the oxygen ions enter the first region 1 where the masking material 50 is opened deeper than in the second region 2 where the masking material 50 is formed. Thereafter, the masking material 50 is removed, and heat treatment takes place, thereby completing the SOI substrate. COPYRIGHT: (C)2009,JPO&INPIT
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