| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having high speed, low power consumption and high storage density. SOLUTION: The method includes: a step of forming first and second amorphous insulating films formed of La, Al and O on p- and n-type wells in a semiconductor substrate; a step of forming a first gate electrode having an absolute value of oxide standard generation enthalpy lower than the oxide standard generation enthalpy of the second amorphous insulating layer on the first and second amorphous insulating layers; a step of thermally treating the entire structure thus formed in an oxygen atmosphere; a step of forming a metal film on the first gate electrode; and a step of applying solid-phase reaction to the first gate electrode and the metal film to form a second gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
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