METHOD OF FORMING POLYCRYSTALLINE SILICON FILM, AND METHOD OF MANUFACTURING MOS SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To improve operation rate of a MOS semiconductor element by controlling formation of uneven surface at the front surface of a polycrystalline silicon film. SOLUTION: A silicon film 5 is formed on a silicon film (amorphous silicon film) 3 via a light transmitting insulating film 4 and the silicon film 3 is irradiated for polycrystallization with a harmonic wave of YAG laser using these silicon film 5 and insulating film 4 as cap films. This polycrystalline silicon film is used as a channel of the MOS semiconductor element. The insulating film 4 used as the cap film may also be used as a gate insulating film as it is. COPYRIGHT: (C)2009,JPO&INPIT