| 摘要 |
PROBLEM TO BE SOLVED: To improve communication speed in a semiconductor storage device with an open-drain or open-collector terminal, and to reduce driving power of the semiconductor storage device. SOLUTION: The control device 10 of the semiconductor storage device 20 includes a first pull-up resistor R1 provided in the inside of the device to be dynamically turned on and off by a transistor T1. The transistor T1 is turned on according to a pull-up resistance control signal CTL output in synchronization with a data read clock, and the signal level of the device side data signal line DdL is pulled up to the power supply potential VDD. As a result, in reading the data (high) from a storage element 22 of the semiconductor storage device 20, the level of the device side data signal line DLd can immediately show a high level to attain high-speed level change of the data signal. COPYRIGHT: (C)2009,JPO&INPIT
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