发明名称 |
DEFECT REDUCTION BY OXIDATION OF SILICON |
摘要 |
A method of fabricating high-quality, substantially relaxed SiGe-on-insulator substrate materials which may be used as a template for strained Si is described. A silicon-on-insulator substrate with a very thin top Si layer is used as a template for compressively strained SiGe growth. Upon relaxation of the SiGe layer at a sufficient temperature, the nature of the dislocation motion is such that the strain-relieving defects move downward into the thin Si layer when the buried oxide behaves semi-viscously. The thin Si layer is consumed by oxidation of the buried oxide/thin Si interface. This can be accomplished by using internal oxidation at high temperatures. In this way the role of the original thin Si layer is to act as a sacrificial defect sink during relaxation of the SiGe alloy that can later be consumed using internal oxidation.
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申请公布号 |
US2008246019(A1) |
申请公布日期 |
2008.10.09 |
申请号 |
US20080139080 |
申请日期 |
2008.06.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;CHEN HUAJIE;DOMENICUCCI ANTHONY G.;FOGEL KEITH E.;SADANA DEVENDRA K. |
分类号 |
H01L27/12;H01L29/15;H01L21/02;H01L21/20;H01L21/762;H01L29/165 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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