| 发明名称 |
INTEGRATED PASSIVE DEVICE WITH A HIGH RESISTIVITY SUBSTRATE AND METHOD FOR FORMING THE SAME |
| 摘要 |
According to one aspect of the present invention, a method of forming a microelectronic assembly, such as an integrated passive device (IPD) ( 72 ), is provided. An insulating dielectric layer ( 32 ) having a thickness ( 36 ) of at least 4 microns is formed over a silicon substrate ( 20 ). At least one passive electronic component ( 62 ) is formed over the insulating dielectric layer ( 32 ).
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| 申请公布号 |
US2008246114(A1) |
申请公布日期 |
2008.10.09 |
| 申请号 |
US20070733063 |
申请日期 |
2007.04.09 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ABROKWAH JONATHAN K.;COSTELLO KERI L.;COTRONAKIS JAMES G.;DALY TERRY K.;FENDER JASON R.;REYES ADOLFO C. |
| 分类号 |
H01L29/00;H01L21/20 |
主分类号 |
H01L29/00 |
| 代理机构 |
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