MICROWAVE/MILLIMETER WAVE SENSOR APPARATUS

摘要

A microwave/millimeter wave sensor apparatus can obtain sensitive detected information while attaining a simple constitution, low costs and high efficiency of power. In the sensor apparatus, a planar radiation type oscillator substrate (S1) having an inner layer GND (12) interposed between a front surface side dielectric substrate (10) and a rear surface side dielectric substrate (11) has a pair of conductor patches (4, 4) axisymmetrically on the side of a front surface layer (16). A gate (2) and a drain (3) of a microwave transistor (1) are respectively connected to the conductor patches (4, 4) to supply power to the gate (2) and the drain (3) of the microwave transistor (1) by a gate-side RF choke circuit (5a) and a drain-side RF choke circuit (5b). An impedance line (9) satisfying an oscillation condition is connected to a source (8) to transmit a transmission RF signal in an RF zone as a planar radiation type oscillator and to receive a reception RF signal as reflected waves from a matter to be measured, thus obtaining an IF signal as detected information by homodyne mixing.